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| WCMA4008C1X 512K x 8 Static RAM Features * Voltage Range -- 4.5V-5.5V * Low active power -- Typical active current: 2.5 mA @ f = 1 MHz * * * * * -- Typical active current: 12.5 mA @ f = fmax Low standby current Automatic power-down when deselected TTL-compatible inputs and outputs Easy memory expansion with CE and OE features CMOS for optimum speed/power LOW Output Enable (OE), and three-state drivers. This device has an automatic power-down feature that reduces power consumption by more than 99% when deselected. Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. Data on the eight I/O pins (I/O0 through I/O7) is then written into the location specified on the address pins (A0 through A18). Reading from the device is accomplished by taking Chip Enable (CE) and Output Enable (OE) LOW while forcing Write Enable (WE) HIGH for read. Under these conditions, the contents of the memory location specified by the address pins will appear on the I/O pins. The eight input/output pins (I/O0 through I/O7) are placed in a high-impedance state when the device is deselected (CE HIGH), the outputs are disabled (OE HIGH), or during a write operation (CE LOW, and WE LOW). The WCMA4008C1X is available in a standard 32-pin 450-mil-wide body width SOIC. Functional Description The WCMA4008C1X is a high-performance CMOS static RAM organized as 512K words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE), an active Logic Block Diagram Pin Configuration Top View SOIC I/O0 INPUT BUFFER A0 A1 A4 A5 A6 A7 A12 A14 A16 A17 I/O1 ROW DECODER I/O2 SENSE AMPS 512 x 256 x 8 ARRAY I/O3 I/O4 I/O5 CE WE OE COLUMN DECODER POWER DOWN I/O6 I/O7 A17 A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 GND 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 VCC A15 A18 WE A13 A8 A9 A11 OE A10 CE I/O7 I/O6 I/O5 I/O4 I/O3 A2 A3 A15 A18 A13 A8 A9 A11 A10 WCMA4008C1X Maximum Ratings (Above which the useful life may be impaired. For user guidelines, not tested.) Storage Temperature ................................. -65C to +150C Ambient Temperature with Power Applied............................................. -55C to +125C Supply Voltage on VCC to Relative GND ....... -0.5V to +7.0V DC Voltage Applied to Outputs in High Z State[1] .....................................-0.5V to VCC +0.5V DC Input Voltage[1]..................................-0.5V to VCC +0.5V Current into Outputs (LOW) .........................................20 mA Static Discharge Voltage...............................................2001V (per MIL-STD-883, Method 3015) Latch-Up Current .....................................................>200 mA Product Portfolio Power Dissipation Operating, Icc VCC Range Product WCMA4008C1X Min. 4.5 V Typ. 5.0V Max. 5.5V Speed 70 ns Temp. Ind'l f = fmax Typ.[3] 12.5 mA Max. 20 mA Typ.[2] 4 A Max. 20 A Standby (ISB2) Operating Range Range Industrial Ambient Temperature -40C to +85C VCC 4.5V-5.5V Notes: 1. VIL (min.) = -2.0V for pulse durations of less than 20 ns. 2. Typical values are measured at VCC = 5V, TA = 25C, and are included for reference only and are not tested or guaranteed. Page 2 of 10 WCMA4008C1X Electrical Characteristics Over the Operating Range WCMA4008C1X Parameter VOH VOL VIH VIL IIX IOZ ICC ISB1 Description Output HIGH Voltage Output LOW Voltage Input HIGH Voltage Input LOW Voltage Input Leakage Current Output Leakage Current VCC Operating Supply Current Automatic CE Power-Down Current --TTL Inputs Automatic CE Power-Down Current --CMOS Inputs GND VI VCC GND VI VCC, Output Disabled f = fMAX = 1/tRC f = 1 MHz IOUT =0 mA VCC = Max., Test Conditions VCC = Min., IOH = - 1 mA VCC = Min., IOL = 2.1 mA 2.2 -0.3 -1 -1 12.5 2.5 1.5 Min. 2.4 0.4 VCC +0.3 0.8 +1 +1 20 Typ.[2] Max. Unit V V V V A A mA mA mA Max. VCC,CE VIH VIN VIH or VIN VIL, f = fMAX Max. VCC, CE VCC - 0.3V, VIN VCC - 0.3V, or VIN 0.3V, f =0 4 ISB2 20 A Capacitance[3] Parameter CIN COUT Description Input Capacitance Output Capacitance Test Conditions TA = 25C, f = 1 MHz, VCC = 5.0V Max. 6 8 Unit pF pF AC Test Loads and Waveforms R1 1800 5V OUTPUT 100 pF INCLUDING JIG AND SCOPE 5V R1 1800 ALL INPUT PULSES 3.0V 90% R2 990 GND 3 ns (a) OUTPUT R2 5 pF 990 INCLUDING JIG AND SCOPE (b) 90% 10% 3 ns 10% Equivalent to: THEVENIN EQUIVALENT 639 1.77V OUTPUT Note: 3. Tested initially and after any design or process changes that may affect these parameters. Page 3 of 10 WCMA4008C1X Switching Characteristics[4] Over the Operating Range WCMA4008C1X Parameter READ CYCLE tRC tAA tOHA tACE tDOE tLZOE tHZOE tLZCE tHZCE tPU tPD WRITE CYCLE tWC tSCE tAW tHA tSA tPWE tSD tHD tLZWE tHZWE [7] Description Read Cycle Time Address to Data Valid Data Hold from Address Change CE LOW to Data Valid OE LOW to Data Valid OE LOW to Low Z CE LOW to Low Z [5] [5, 6] Min. 70 Max. Unit ns 70 10 70 35 5 25 10 25 0 70 70 60 60 0 0 55 30 0 5 25 ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns OE HIGH to High Z [5] CE HIGH to High Z[5, 6] CE LOW to Power-Up CE HIGH to Power-Down Write Cycle Time CE LOW to Write End Address Set-Up to Write End Address Hold from Write End Address Set-Up to Write Start WE Pulse Width Data Set-Up to Write End Data Hold from Write End WE HIGH to Low Z[5] WE LOW to High Z [5, 6] Notes: 4. Test conditions assume signal transition time of 5 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V, and output loading of the specified IOL/IOH and 100-pF load capacitance. 5. At any given temperature and voltage condition, tHZCE is less than tLZCE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any given device. 6. tHZOE, tHZCE, and tHZWE are specified with a load capacitance of 5 pF as in part (b) of AC Test Loads. Transition is measured 500 mV from steady-state voltage. 7. The internal write time of the memory is defined by the overlap of CE LOW, and WE LOW. CE and WE must be LOW to initiate a write, and the transition of any of these signals can terminate the write. The input data set-up and hold timing should be referenced to the leading edge of the signal that terminates the write. Page 4 of 10 WCMA4008C1X Data Retention Characteristics (Over the Operating Range) Parameter VDR ICCDR Description VCC for Data Retention Data Retention Current No input may exceed VCC + 0.3V VCC = VDR = 3.0V CE > VCC - 0.3V VIN > VCC - 0.3V or VIN < 0.3V 0 tRC Conditions Min. 2.0 20 Typ.[2] Max. Unit V A tCDR[3] tR[8] Chip Deselect to Data Retention Time Operation Recovery Time ns ns Data Retention Waveform DATA RETENTION MODE VCC 3.0V tCDR CE VDR > 2V 3.0V tR Page 5 of 10 WCMA4008C1X Switching Waveforms Read Cycle No.1[9, 10] tRC ADDRESS tAA tOHA DATA OUT PREVIOUS DATA VALID DATA VALID Read Cycle No. 2 (OE Controlled)[10, 11] ADDRESS tRC CE tACE OE tDOE tLZOE HIGH IMPEDANCE tLZCE VCC SUPPLY CURRENT tPU 50% tHZOE tHZCE DATA VALID tPD 50% ISB HIGH IMPEDANCE DATA OUT Notes: 8. Full Device operatin requires linear VCC ramp from VDR to VCC(min) > 100 s or stable at Vcc(min) > 100 s. 9. Device is continuously selected. OE, CE = VIL. 10. WE is HIGH for read cycle. 11. Address valid prior to or coincident with CE transition LOW. Page 6 of 10 WCMA4008C1X Switching Waveforms (continued) Write Cycle No. 1 (CE Controlled)[12] tWC ADDRESS tSCE CE tSA tAW tPWE WE tSD DATA I/O DATA VALID tHD tHA Write Cycle No. 2 (WE Controlled, OE HIGH During Write)[12, 13] tWC ADDRESS tSCE CE tHZCE tAW tSA WE tPWE tHA OE tSD DATA I/O NOTE 14 tHZOE Notes: 12. If CE goes HIGH simultaneously with WE going HIGH, the output remains in a high-impedance state. 13. Data I/O is high-impedance if OE = VIH. 14. During this period the I/Os are in the output state and input signals should not be applied. tHD DATAIN VALID Page 7 of 10 WCMA4008C1X Switching Waveforms (continued) Write Cycle No.3 (WE Controlled, OE LOW)[12, 13] tWC ADDRESS tSCE CE tHZCE tAW tSA WE tSD DATAI/O NOTE 14 tHZWE DATA VALID tPWE tHA tHD tLZWE Truth Table CE H L L L OE X L X H WE X H L H I/O0 - I/O7 High Z Data Out Data In High Z Power-Down Read Write Selected, Outputs Disabled Mode Power Standby (ISB) Active (ICC) Active (ICC) Active (ICC) Page 8 of 10 WCMA4008C1X Ordering Information Speed (ns) 70 Ordering Code WCMA4008C1X-GF70 Package Name G32 Package Type 32-Lead (450-Mil) Molded SOIC Operating Range Industrial Package Diagrams 32-Lead (450 MIL) Molded SOIC, G32 Page 9 of 10 |
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